材料科学
发光二极管
光电子学
基质(水族馆)
异质结
图层(电子)
外延
硅
纳米技术
海洋学
地质学
作者
С. А. Кукушкін,L. K. Markov,A. S. Pavlyuchenko,I. P. Smirnova,А. В. Осіпов,А. С. Гращенко,A. E. Nikolaev,A. V. Sakharov,A. F. Tsatsul’nikov,Г.В. Святец
出处
期刊:Coatings
[Multidisciplinary Digital Publishing Institute]
日期:2023-06-24
卷期号:13 (7): 1142-1142
被引量:3
标识
DOI:10.3390/coatings13071142
摘要
This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional method, a new method involving the coordinated substitution of atoms (MCSA) to form the SiC layer is proposed. This new approach enables the growth of epitaxial GaN layers with low defect content and facilitates transfer to any surface. The paper details the technology of manufacturing LEDs on SiC/Si substrates obtained by the MCSA and elaborates on the benefits of using these substrates in LED production. Additionally, the advantages of the growth interface between SiC and Si materials are discussed. Moreover, it is found that thinner SiC layers (<200 nm) contribute to the scattering of the LED’s own radiation in the heterostructure waveguide, which decreases its absorption by silicon. For flip-chip LEDs with the substrate removed, substrates with thicker SiC layers (~400 nm) and a growth porous layer of several microns at the SiC-Si interface is utilized to simplify Si substrate removal and enhance the manufacturing process’s cost-effectiveness.
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