材料科学
电容器
电容
电流密度
钽电容器
箔法
光电子学
蚀刻(微加工)
制作
薄膜电容器
电解电容器
阳极
聚合物电容器
钽
滤波电容器
纳米技术
电压
复合材料
电气工程
冶金
电极
图层(电子)
医学
化学
物理
替代医学
物理化学
量子力学
病理
工程类
作者
Jiping Zhao,Youlong Xu,Wei Hou,Yizhuo Li,Xiangdong Ding
标识
DOI:10.1002/admt.202201967
摘要
Abstract Although embedded capacitors have been applied and researched for many years, their large‐scale application still faces challenges such as low capacitance density, high thickness, high cost, and incompatibility with integrated processes. In this work, a breakthrough has been made in the fabrication of ultra‐thin tantalum (Ta) capacitors with ultra‐high capacitance density that can be used for 3D packaging. The key to these excellent performances is the application of Ta foil with nano‐porous structure to the anode of the capacitor. The Ta foil with high specific surface area (SSA) is successfully prepared by direct current pulse etching. At a current density of 15 mA cm −2 , a pulse frequency of 50 Hz, and a duty cycle of 30%, the SSA of Ta foil is increased by 76 times after etching in an electrolyte with 0.01 v% TOA for 30 min. Based on this, Ta capacitors with a form factor of less than 40 µm, showing a capacitance density of 750 nF mm −2 and a leakage current of less than 2.1 × 10 −7 A at 8 V is successfully fabricated. To the best of the authors’ knowledge, this is the highest capacitance density reported to date for the mentioned form factors.
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