Oxygen level: the dominant of resistive switching characteristics in cerium oxide thin films

Abstract Currently, resistive switching mechanisms in metal oxide thin films are not clearly understood due to lack of solid evidence. In this work, the switching behaviour of the Au/CeO 2 /conductive glass structure was analysed, where reproducible and pronounced resistive switching characteristics were obtained. The role of oxygen vacancies in switching characteristics was investigated. The concentration of oxygen vacancies in the CeO 2 thin films was controlled by post-annealing and monitored by x-ray photon spectroscopy. The reduction in the switching ratio and the intensity of the peak associated with oxygen concentration O 1s level after annealing treatment confirmed the dominating role of oxygen vacancies in switching behaviour.