浸没式光刻
平版印刷术
材料科学
光刻
下一代光刻
纳米技术
多重图案
计量学
光电子学
纳米光刻
薄脆饼
抵抗
电子束光刻
光学
图层(电子)
物理
制作
病理
医学
替代医学
作者
Guido Rademaker,A. Le Pennec,Tommaso Jacopo Giammaria,K. Benotmane,H.T.M. Pham,Charlotte Bouet,Maria Gabriela Gusmão Cacho,Maxime Argoud,Marie-Line Pourteau,Anne Paquet,Ahmed Gharbi,Christophe Navarro,Célia Nicolet,Xavier Chevalier,Kaumba Sakavuyi,Paul F. Nealey,Ralouca Tiron
摘要
Directed Self-Assembly (DSA) of Block Copolymers (BCP) by chemo-epitaxial alignment is a promising high resolution lithography technique compatible with CMOS high-volume manufacturing. It allows overcoming limitations in resolution and local stochasticity by conventional, imaging based, lithography. However, for BCP with pitches below 20 nm and guide patterning by immersion lithography (193i), multiplication factors ≥ 4 become necessary, imposing stringent requirements on the guides and defectivity becomes hard to control. The Arkema-CEA (ACE) process flow overcomes this limit by creating the guides by a self-aligned double patterning (SADP) process flow, followed by the deposition of a cross-linkable neutral mat and selective grafting of the guides. This paper reports on the transfer of the process flow to immersion lithography, details challenges encountered in process optimization, notably the dependence of the wetting of the neutral layer on the surface energy and the morphology of the spacers. Last, the paper presents a metrology and defectivity roadmap combined with preliminary, promising results.
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