磁性
范德瓦尔斯力
凝聚态物理
反铁磁性
电场
磁化
纳米计量学
铁磁性
材料科学
磁场
物理
纳米技术
原子力显微镜
分子
量子力学
作者
Shengwei Jiang,Jie Shan,Kin Fai Mak
出处
期刊:Nature Materials
[Springer Nature]
日期:2018-03-12
卷期号:17 (5): 406-410
被引量:682
标识
DOI:10.1038/s41563-018-0040-6
摘要
Controlling magnetism by purely electrical means is a key challenge to better information technology 1 . A variety of material systems, including ferromagnetic (FM) metals2-4, FM semiconductors 5 , multiferroics6-8 and magnetoelectric (ME) materials9,10, have been explored for the electric-field control of magnetism. The recent discovery of two-dimensional (2D) van der Waals magnets11,12 has opened a new door for the electrical control of magnetism at the nanometre scale through a van der Waals heterostructure device platform 13 . Here we demonstrate the control of magnetism in bilayer CrI3, an antiferromagnetic (AFM) semiconductor in its ground state 12 , by the application of small gate voltages in field-effect devices and the detection of magnetization using magnetic circular dichroism (MCD) microscopy. The applied electric field creates an interlayer potential difference, which results in a large linear ME effect, whose sign depends on the interlayer AFM order. We also achieve a complete and reversible electrical switching between the interlayer AFM and FM states in the vicinity of the interlayer spin-flip transition. The effect originates from the electric-field dependence of the interlayer exchange bias.
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