Activating and optimizing the MoS2@MoO3 S-scheme heterojunction catalyst through interface engineering to form a sulfur-rich surface for photocatalyst hydrogen evolution

As a crucial part of artificial photosynthesis, the design of the catalyst is important essential. Among them, the interface engineering between semiconductors and the construction of surface-active sites play a vital role in generating and transporting light-excited electrons, which can ultimately accelerate water decomposition. Therefore, the MoS2@MoO3 step (S)-scheme heterojunction photocatalyst was prepared by in-situ partial sulfidation. The excellent interface engineering of MoS2@MoO3 nanomaterials achieves a high surface reaction rate. The in-situ vulcanization strategy gradually corrodes from the outside to the inside. The introduction of sulfur atoms can replace oxygen atoms to build a sulfur-rich surface and generate molybdenum sulfide. The amount of thioacetamide is adjusted to control vulcanization and optimizing the experimental conditions, the best hydrogen production rate is 12416.8 µmol h−1 g−1. An in-situ irradiation XPS experiments and DFT calculations provide a deeper understanding of the S-scheme electron transport mechanism in MoS2@MoO3. MoS2@MoO3 interface interaction has penetrating electron channels and a strong interface interaction force, which effectively promotes the charge transfer between interfaces. This gradual surface vulcanization strategy provides new ideas for introducing synergistic surface-active sites and optimizing interface engineering photocatalyst projects.