电感器
拓扑(电路)
二极管
电磁干扰
电容器
电感
电磁干扰
缓冲器
电子工程
电压
计算机科学
电气工程
工程类
作者
Tong Yao,Chenhao Nan,Raja Ayyanar
标识
DOI:10.1109/tia.2018.2791972
摘要
This paper proposes a new high-gain soft-switching dc-dc topology based on a switched inductor boost converter (SIBC). A conventional SIBC as a high gain boost topology has the issues of high conduction loss in switching diodes and high switching loss in the main switches. Also, it has severe electromagnetic interference (EMI) issue due to high-frequency ringing formed by parasitic inductance and diode junction capacitors. The new topology is derived with the objective of achieving zero voltage switching (ZVS) turn on of the main switch. Instead of adding extra active clamp zero voltage transition (ZVT) path at the switching node, the proposed topology augments the auxiliary ZVT path to the switching diode path. This is achieved by replacing the switching diodes with synchronous switches. The new topology can achieve soft switching for all the switches and alleviate the EMI issue. All the diodes achieve zero current switching (ZCS) turn off without reverse recovery. Auxiliary switches have ZCS turn on and ZVS turn off, and the main switches have ZVS turn on. The soft-switching SIBC also reduces the conduction loss in the switching diodes. A numerical simulation in PLECS and a prototype hardware are built corresponding to a micro-inverter application with 100 kHz switching frequency. Peak power conversion efficiency of 94.76% is achieved in the hardware prototype with Si devices.
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