EFFECT OF LATTICE MISMATCH ON THE MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF LaNiO3 CONDUCTIVE FILMS

In this work, we prepared LaNiO 3 (LNO) and Au-LaNiO 3 (Au-LNO) films using sol–gel multilayer coating method. The effects of lattice mismatch on the microstructure and electrical properties of the films were investigated by choosing different single-crystal substrate. XRD, SEM, and AFM results showed the high quality of LNO and Au-LNO films, indicating the successful epitaxial growth of the films on the single-crystal substrates. The room temperature resistivity of LNO films increased with the increase of lattice mismatch while different tendency was observed in Au-LNO films, suggesting that different mechanisms prevailed in the LNO and Au-LNO films. Both the transport behavior and the residual resistivity ratio were checked to explore the relationship between the lattice mismatch and the electrical properties of the films. Strain and defect concentration were proposed as the predominating factors for the changes in the resistivity of LNO and Au-LNO films under the influence of lattice mismatch.