Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

Abstract As part of this study, we present a study on the act of electrically driven Laser Diode (LD) using trinary Aluminum Gallium Nitride (AlGaN) with optimized doping concentrations. To increase the LD’s output power and capabilities, we focused on utilizing different doping concentrations in the electron-blocking layer (EBL). We conducted the calculations with PICS 3D software; we obtained simulation results indicating that the designed LD structure successfully emitted an ultraviolet (UV) laser class-c at a wavelength of 263.7 nm. By implementing this approach, we anticipate achieving higher optical output power by 6%, enhancing the concentration of electron and hole, and reducing the electron current density (356.1 to 342.8) and threshold voltage (4.516 to 4.5 V), and hole current density increases in AlGaN-based ultraviolet LDs. These promising outcomes can be attributed to the effective conduction band barrier height achieved by the optimized electron-blocking layer (EBL).