材料科学
薄膜
兴奋剂
X射线光电子能谱
光电效应
脉冲激光沉积
光电子学
带隙
铁电性
肖特基二极管
泄漏(经济)
肖特基势垒
分析化学(期刊)
光伏系统
纳米技术
二极管
化学工程
化学
电气工程
电介质
色谱法
工程类
经济
宏观经济学
作者
Xinyan Wang,Can Wang,Yao Xin-zi,Yong Zhou,Ning Liang,Qiao Jin,Kun Chen,Meng He,Er‐Jia Guo,Ge Chen,Ge Yang,Kuijuan Jin
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2023-02-13
卷期号:5 (2): 1234-1242
被引量:3
标识
DOI:10.1021/acsaelm.2c01690
摘要
Zn-doped BiFeO3 (BFO) thin films with compositional formula BiFe1–xZnxO3 (x = 0, 0.1, and 0.2) have been epitaxially grown on SrRuO3 buffered SrTiO3 substrates by pulsed laser deposition. The high-concentration Zn doping does not suppress the ferroelectric polarization of the BFO films, and the Zn-doped BFO thin films also show reduced leakage current and an enhanced photovoltaic effect. By optical and photoelectron spectroscopy measurements, with Zn doping, the BFO thin films show more oxygen vacancies and a structural evolution, and moreover, a blue-shift of optical bandgap and an increase of work function are demonstrated. The reduction of leakage current and the enhancement of photovoltaic effect are related to the variation of interfacial Schottky junctions and oxygen vacancies with doping. This study reveals systematic insights into the effects of Zn doping on the physical properties of BFO thin films.
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