非阻塞I/O
光电二极管
材料科学
分析化学(期刊)
物理
化学
光电子学
有机化学
催化作用
作者
Han-Yin Liu,Zhen-Yuan Huang
出处
期刊:IEEE Sensors Journal
[Institute of Electrical and Electronics Engineers]
日期:2021-10-01
卷期号:21 (19): 21486-21493
被引量:6
标识
DOI:10.1109/jsen.2021.3104826
摘要
A p-NiO/N-Ga 0.3 Zn 0.7 O heterojunction photodiode was fabricated and investigated in this study. p-type NiO and n-type Ga 0.3 Zn 0.7 O thin films were deposited using mist atmospheric pressure chemical vapor deposition to form the pN heterojunction. This study also characterizes the crystallinity, oxygen deficiency, and energy bandgap of the NiO and Ga 0.3 Zn 0.7 O thin films. The p-NiO/N-Ga 0.3 Zn 0.7 O heterojunction photodiode exhibits significant rectification I-V characteristics. Compared with a Ga 0.3 Zn 0.7 O metal-semiconductor-metal photodetector, the p-NiO/N-Ga 0.3 Zn 0.7 O heterojunction photodiode shows a smaller dark current (~7.94 nA at −1 V), more significant UV-to-visible rejection ratio ( $\sim 9 \times 10 ^{3}$ ), and higher specific detectivity ( $\sim 1.67 \times 10 ^{{11{ }}}$ Jones). Additionally, the p-NiO/N-Ga 0.3 Zn 0.7 O heterojunction photodiode does not have internal photoconductive gain, so the p-NiO/N-Ga 0.3 Zn 0.7 O heterojunction photodiode shows a shorter response time than the Ga 0.3 Zn 0.7 O metal-semiconductor-metal photodetector.
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