部分位错
材料科学
叠加断层
透射电子显微镜
堆积
结晶学
位错
Atom(片上系统)
合金
扫描透射电子显微镜
跳跃式监视
图层(电子)
断层(地质)
凝聚态物理
复合材料
纳米技术
化学
核磁共振
物理
地质学
计算机科学
人工智能
嵌入式系统
地震学
作者
Cong He,Yong Zhang,Zhiqiao Li,Houwen Chen,Jian‐Feng Nie
标识
DOI:10.1016/j.jma.2022.11.021
摘要
Stacking faults (SFs) and the interaction between solute atoms and SFs in a Mg–Bi alloy are investigated using aberration-corrected scanning transmission electron microscopy. It is found that abundant I1 SFs are generated after cold rolling and are mainly distributed inside {101¯2} twins. After aging treatment, the formation of single-layer and three-layer Bi atom segregation in the vicinity of I1 fault are clearly observed. Bi segregation also occurs at the 1/6<22¯03> bounding Frank partial dislocation cores. The segregation behaviors in I1 fault and Frank dislocations are discussed and rationalized using first-principles calculations.
科研通智能强力驱动
Strongly Powered by AbleSci AI