Photo-triggered integrated circuits and logic operations based on MoS2/PZT photoresistor

Abstract Photo-induced interface engineering is one of the effective strategies for enhancing the performance of two-dimensional (2D) materials-based optoelectronics, thanks to their atomic-scale thickness and easily tunable band structure. However, the expansion of functional applications in 2D devices through photo-assisted interface regulation still face substantial technical hurdles. In this study, a photo-gated photoresistor is constructed by integrating monolayer molybdenum disulfide (MoS 2 ) and ultrathin ferroelectric lead zirconate titanate (Pb(Zr 0.52 Ti 0.48 )O 3 , PZT) substrate. Through the modulation of the built-in electric field and photo-generated trap charges at the MoS 2 /PZT interface, light-triggered abrupt resistance switching (>10 6 ) has been achieved, thereby significantly expanding its functionality for optically controlled logic operations. All-MoS 2 inverter, OR gates and AND gates are successfully fabricated and demonstrate excellent capabilities in photo-triggered logic operations. The inverter exhibited a huge output voltage switching from 0.0001 V to 0.8 V, according to logic states ‘0’ → ‘1’ under light triggering, with the output voltage showing a logarithmic linear relationship with light power. We also show the all-MoS 2 electrical circuits, which capable of performing the OR and AND logic operation, the basis from which all logical operations and full digital functionality can be deduced. This study provides new insights into the application of low-dimensional materials and ferroelectric heterojunctions in photonic logic devices, and future performance optimization can be achieved through interface engineering.