材料科学
溅射沉积
钙钛矿(结构)
锡
钝化
能量转换效率
溅射
氧化铟锡
光电子学
腔磁控管
图层(电子)
钙钛矿太阳能电池
薄膜
化学工程
纳米技术
冶金
工程类
作者
Zongyang Peng,Leyang Jin,Zhuang Zuo,Qi Qi,Shaocong Hou,Yongping Fu,Dechun Zou
标识
DOI:10.1021/acsami.3c03679
摘要
Tin oxide (SnO2) is the most commonly used electron transport material for perovskite solar cells (PSCs). Various techniques have been applied to deposit tin dioxide, including spin-coating, chemical bath deposition, and magnetron sputtering. Among them, magnetron sputtering is one of the most mature industrial deposition techniques. However, PSCs based on magnetron-sputtered tin oxide (sp-SnO2) have a lower open-circuit voltage (Voc) and power conversion efficiency (PCE) than those prepared by the mainstream solution method. This is mainly due to the oxygen-related defects at the sp-SnO2/perovskite interface, and traditional passivation strategies usually have little effect on them. Herein, we successfully isolate the oxygen adsorption (Oads) defects located on the surface of sp-SnO2 from the perovskite layer using a PCBM double-electron transport layer. This isolation strategy effectively suppresses the Shockley-Read-Hall recombination at the sp-SnO2/perovskite interface, which results in an increase in the Voc from 0.93 to 1.15 V and an increase in PCE from 16.66 to 21.65%. To our knowledge, this is the highest PCE achieved using a magnetron-sputtered charge transport layer to date. The unencapsulated devices maintain 92% of their initial PCE after storage in air with a relative humidity of 30-50% after 750 h. We further use the solar cell capacitance simulator (1D-SCAPS) to confirm the effectiveness of the isolation strategy. This work highlights the application prospect of magnetron sputtering in the field of perovskite solar cells and provides a simple yet effective way to tackle the interfacial defect issue.
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