材料科学
无定形固体
退火(玻璃)
薄脆饼
表面粗糙度
晶片键合
直接结合
硅
复合材料
氩
辐照
纳米技术
光电子学
结晶学
化学
物理
有机化学
核物理学
作者
Song Yang,Yongfeng Qu,Ningkang Deng,Kang Wang,Shi He,Yuan Yuan,Wenbo Hu,Shengli Wu,Hongxing Wang
标识
DOI:10.1088/2053-1591/ac1aec
摘要
Abstract Surface activated bonding (SAB) based on argon ion beam irradiation was used to directly bond Si and Si wafers at room temperature, and the effects of the surface activation time on the Si-Si bonding were investigated. The experimental results show that the surface activation treatment with a proper duration is beneficial to the reduction of surface roughness of Si wafers and the realization of high bonding strength. The Si-Si wafers bonded after the surface activation of 420 s has an extremely low percentage of area covered by voids (0.08%) and a high bonding strength (9.45 MPa). Meanwhile, the annealing at 500 °C does not lead to a significant change in the percentage of area covered by voids for Si-Si bonding. Besides, the transmission electron microscope characterization indicates that the argon ion beam irradiation of 180 s can result in the formation of an amorphous Si layer with a thickness of approximately 10.6 nm at the Si-Si bonding interface, and the whole cross-section structure of the Si-Si bonding consists of a Si substrate, an amorphous Si layer and a Si substrate.
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