蚀刻(微加工)
溅射
图层(电子)
光刻胶
感应耦合等离子体
等离子体
分析化学(期刊)
材料科学
离子
等离子体刻蚀
反应离子刻蚀
硅
二氧化硅
稳态(化学)
薄膜
化学
纳米技术
光电子学
物理化学
复合材料
物理
量子力学
有机化学
色谱法
作者
Man Xu,Ni Bao,Yongqiang Hao,Yan Feng,Xiaoliang Ma
标识
DOI:10.1002/pssa.202000223
摘要
Silicon dioxide (SiO 2 ) layers using photoresist (PR) masks are etched by inductively coupled plasma in CH 4 /SF 6 under various etching conditions. A thin CH x F y polymer layer which exists on the surface of sample during steady‐state etching is observed. The steady‐state CH x F y layer reduces the physical sputtering of ions, resulting in the etching rate of PR decreases significantly. Although the high‐density plasmas can enhance the physical sputtering to some extent and give SiO 2 more opportunities to react with fluorine atoms, it is helpful to improve the etching rate of SiO 2 . By optimizing process conditions, the thickness of the steady‐state CH x F y layer and the density of ions are regulated, and a reasonable selective etching is obtained.
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