异质结
材料科学
光电子学
钝化
化学气相沉积
带材弯曲
费米气体
宽禁带半导体
高电子迁移率晶体管
半导体
晶体管
电子
纳米技术
图层(电子)
电压
电气工程
工程类
物理
量子力学
作者
Rui Zhao,Sen Huang,Xinhua Wang,Yuchen Li,Jingyuan Shi,Yichuan Zhang,Jie Fan,Haibo Yin,Xiaojuan Chen,Wei Ke,Shan Wu,Xuelin Yang,Bo Shen,Xinyu Liu
摘要
The physical mechanism for recovery of 2D electron gas (2DEG) in down-scaled AlGaN/GaN heterostructures with SiNx layers grown by low-pressure chemical vapor deposition (LPCVD) was investigated by means of Hall-effect characterization, scanning Kelvin probe microscopy (SKPM), and self-consistent Poisson–Schrödinger calculations. Observations using SKPM show that the surface potential of the AlGaN/GaN heterostructure remained nearly unchanged (∼1.08 eV) as the thickness of the AlGaN barrier was reduced from 18.5 to 5.5 nm and likely originated from the surface pinning effect. This led to a significant depletion of 2DEG from 9.60 × 1012 to 1.53 × 1012 cm−2, as determined by Hall measurements, toward a normally OFF 2DEG channel. Based on a consistent solution of the Schrödinger–Poisson equations and analytical simulations, approximately 3.50 × 1013 cm−2 of positive fixed charges were confirmed to be induced by a 20-nm LPCVD-SiNx passivation over the AlGaN/GaN heterostructures. The interface charge exerted a strong modulation of band bending in the down-scaled AlGaN/GaN heterostructure, contributing to the efficient recovery of 2DEG charge density (∼1.63 × 1013 cm−2). E-mode ultrathin-barrier AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors with a low ON-resistance (RON), high ON/OFF current ratio, and steep subthreshold slope were implemented using LPCVD-SiNx passivation.
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