空隙(复合材料)
薄脆饼
材料科学
晶片键合
阳极连接
放气
直接结合
复合材料
空虚
纳米技术
化学
认识论
哲学
有机化学
作者
Fuya Nagano,Serena Iacovo,Alain Phommahaxay,Fumihiro Inoue,Francois Chancerel,Hasan Naser,Gerald Beyer,Eric Beyne,Stefan De Gendt
标识
DOI:10.1149/2162-8777/ac7662
摘要
Achieving a void-free bonding interface is an important requirement for the wafer-to-wafer direct bonding process. The two main potential mechanisms for void formation at the interface are (i) void formation induced by gas, such as condensation by-products caused by the bonding process or outgassing of trapped precursors, and (ii) void formation induced by physical obstacles, such as particles. In this work, emphasis is on the latter process. Particles were intentionally deposited on the wafer prior to bonding to study the kinetics of the physical void formation process. Void formations induced by particles deposited on different dielectrics bonding materials were analyzed using scanning acoustic microscopy and image software. The void formation mechanism is then discussed along with the wafer bonding dynamics at room temperature.
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