Hydrogen Atom Doping—A Versatile Method for Modulated Interface Resistive Switching

Abstract Interface kinetics plays a crucial role in modulating the resistive switching mechanism for memristor devices with a Schottky junction. This study introduces H atoms by catalytic doping and examines the interfacial electrical transfer characteristics of the Pd/Nb‐doped SrTiO 3 (Nb‐STO). The I–V measurements show that H + doping at the Pd/Nb‐STO interface reduces the barrier height by 300 mV compared to the sample before H + doping. This reduction in barrier height is further correlated with the decrease in built‐in potential by 300 mV and depletion layer thickness from C–V measurements. The underlying reason for such a drastic change in resistive switching characteristics is the reduction of interface layer thickness. The work highlights the easy use of Pd metal to introduce H atoms to oxide materials and provides insight into their effects on switching mechanisms.