通过硅通孔
计算机科学
集成电路
制造工程
材料科学
球栅阵列
出处
期刊:Electronic Components and Technology Conference
日期:2010-06-01
卷期号:: 1031-1042
被引量:131
标识
DOI:10.1109/ectc.2010.5490828
摘要
3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general, the TSV (through-silicon-via) separates the 3D IC packaging and 3D IC/Si integrations, i.e., the latter two use TSV, but 3D IC packaging does not. TSV for 3D integration is >26 years old technology, which (with a new concept that every chip could have two active surfaces) is the focus of this study. Emphasis is placed on the TSV manufacturing yield and hidden costs. A 3D integration roadmap is also provided.
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