范德瓦尔斯力
电子线路
逻辑门
材料科学
晶体管
纳米技术
光电子学
分子
物理
电气工程
工程类
量子力学
电压
作者
Junzhe Kang,Hanwool Lee,Ashwin Tunga,Xiaotong Xu,Lin Ye,Zijing Zhao,Hojoon Ryu,Chia‐Hsun Tsai,Takashi Taniguchi,Kenji Watanabe,Shaloo Rakheja,Wenjuan Zhu
出处
期刊:ACS Nano
[American Chemical Society]
日期:2025-03-27
标识
DOI:10.1021/acsnano.4c16862
摘要
Emerging applications in data-intensive computing and circuit security demand logic circuits with high functional density, reconfigurability, and energy efficiency. Here, we demonstrate nonvolatile reconfigurable four-mode field-effect transistors (NVR4M-FETs) based on two-dimensional (2D) MoTe2 and CuInP2S6 (CIPS), offering both polarity switching and threshold voltage modulation. The device exploits the ferroelectric polarization of CIPS at the source/drain regions to achieve dynamic control over the transistor polarity, enabling transitions between n-type and p-type states through polarization-induced local electrostatic doping. Additionally, multilayer graphene floating gates are incorporated to modulate the threshold voltage, yielding four distinct nonvolatile operating modes: n-type logic, p-type logic, always-on memory, and always-off memory. Leveraging the four-mode property, the NVR4M-FET can function as a one-transistor-per-bit ternary content-addressable memory (TCAM). In addition, we demonstrate the construction of transformable logic gates with 14 distinct logic functions using two NVR4M-FETs and a reconfigurable half a dder/subtractor using three NVR4M-FETs integrated with load resistors. Furthermore, we show that a 2-input look-up table can be achieved with eight NVR4M-FETs compared to 12 transistors using reconfigurable transistors, highlighting the potential of NVR4M-FETs for high-density logic circuits. These results underscore the potential of NVR4M-FETs as essential building blocks for energy-efficient, in-memory computing, and secure hardware applications.
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