热光电伏打
材料科学
光电子学
带隙
共发射极
能量转换效率
电介质
光学
物理
作者
Tobias Burger,Dejiu Fan,Kyusang Lee,Stephen R. Forrest,Andrej Lenert
出处
期刊:ACS Photonics
[American Chemical Society]
日期:2018-06-27
卷期号:5 (7): 2748-2754
被引量:46
标识
DOI:10.1021/acsphotonics.8b00508
摘要
Thermophotovoltaic (TPV) systems are a promising technology for distributed conversion of high-temperature heat to electricity. To achieve high conversion efficiency, the transport of sub-bandgap radiation between the thermal emitter and PV cell should be suppressed. This can be achieved by recycling sub-bandgap radiation back to the emitter using a spectrally selective cell. However, conventional TPV cells exhibit limited sub-bandgap reflectance. Here we demonstrate thin-film In0.53Ga0.47As-based structures with high spectral selectivity, including record-high average sub-bandgap reflectance (96%). Selectivity is enabled by short optical paths through a high-quality material fabricated using epitaxial lift-off, high-reflectance back surfaces, and optimized interference. In addition, we use a parallel-plate TPV model to evaluate the impact of specific structural features on performance and to optimize the cell architecture. We show that a dielectric spacer between InGaAs and the Au back surface is an important feature that enables a predicted TPV efficiency above 50% (with a power output of 2.1 W/cm2), significantly higher than current TPV devices. This work provides guidelines for the design of high-efficiency, low-cost TPV generators.
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