材料科学
光电流
超细纤维
光电子学
纳米线
暗电流
光学
光电探测器
光探测
光电二极管
紫外线
折射率
响应度
光纤
制作
光子学
物理
复合材料
作者
Longfei Zhang,Ying Wang,Changrui Liao
出处
期刊:14th National Conference on Laser Technology and Optoelectronics (LTO 2019)
日期:2019-05-17
摘要
Semiconductor-based photodetectors have received wide attention. Traditional photodetectors are based on electrical test methods, which inevitably disturbed by dark current noise. In order to overcome this problem, this paper proposes an all-optical photodetection scheme based on a microfiber/SiC-nanowire directional coupling structure, which directly utilizes the refractive index change of SiC nanowire caused by photogenerated carriers instead of the change of photocurrent. The device is fabricated by transferring a single SiC nanowire to a microfiber with diameter of about 1 μm by microscopic operating system. When the device is irradiated by a 266 nm deep ultraviolet laser, its light detection sensitivity reaches up to 103 pm/(W/cm2).
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