Comparison of electrical and photovoltaic parameters of the hetero-junction solar cells based on CZTS and CIGS ultrathin films

Copper-Zinc-Tin-Sulphide (CZTS)/n-Si and Copper-Indium-Gallium-Selenide (CIGS)/n-Si hetero-junction solar cells have been manufactured using Pulse Laser Deposition (PLD) technique. Properties of both CZTS&CIGS ultrathin films have been produced in comparable thicknesses, analysed and compared to each other. CIGS ultrathin film has smaller main crystalline size but absorbs more light compared to CZTS. J−V characteristics of CZTS/n-Si and CIGS/n-Si hetero-junctions have been obtained in the darkness and under light conditions. The ideality factor, barrier height, serial resistances of these hetero-junctions have been calculated by the traditional J−V and Cheung-Cheung methods for the darkness. Although the serial resistance of CZTS hetero-junction has been found to be very low compared to CIGS hetero-junction, the efficiency and photocurrent of CZTS solar cell have been higher compared to those of CIGS solar cellJ−V. The photoelectric outputs of CZTS/n-Si and CIGS/n-Si cells have been studied using SCAPS-1D programme. We have found/concluded difference in J−V characteristics between CZTS/n-Si and CIGS/n-Si structures.