材料科学
化学气相沉积
微晶
多晶硅
硅
薄脆饼
扫描电子显微镜
饱和(图论)
接触角
电阻率和电导率
复合材料
分析化学(期刊)
矿物学
纳米技术
光电子学
冶金
化学
薄膜晶体管
图层(电子)
电气工程
组合数学
工程类
色谱法
数学
作者
Raphael Glatthaar,Frank Huster,Tobias Okker,Beatriz Cela Greven,Sven Seren,Giso Hahn,Barbara Terheiden
标识
DOI:10.1002/pssa.202200501
摘要
One of the main challenges for the industrialization of the passivating contact approach for Si solar cells is the metallization with screen‐printed paste while maintaining the low saturation current density. Using a non‐commercial Ag paste to metallize atmospheric pressure chemical vapor deposition (APCVD) (n) poly‐Si, the metal contact formation for passivating contacts on planar and textured substrates is investigated. The paste creates deep imprints caused by silver crystallite formation at the pyramid tips of textured silicon wafers. In contrast, on planar wafers, the silver crystallite growth stops at the interface between poly‐Si and the Si wafer. Similar contact resistivities are determined by comparing textured and planar Si samples. On planar samples, a contact resistivity of 4.6(14) mΩcm 2 and a saturation current density of only 141(10) fA cm −2 for the metallized contact area are demonstrated. Textured samples with a contact resistivity of 2.7(17) mΩcm 2 show a higher saturation current of 480(40) fA cm −2 . This etching behavior is investigated by structural and elemental analyses using scanning electron microscopy.
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