异质结
光电二极管
材料科学
光电子学
晶体管
氧化物
薄膜晶体管
图层(电子)
活动层
电压
纳米技术
电气工程
冶金
工程类
作者
Yu Bin Kim,Jun Hyung Jeong,Min Ho Park,Jung Min Yun,Jin Won Hyun,Hyoun Ji Ha,Seong Jae Kang,Seong Jun Kang
出处
期刊:Materials
[MDPI AG]
日期:2024-01-30
卷期号:17 (3): 677-677
摘要
In this study, we demonstrated the effective separation of charge carriers within the IGZO/IZO heterostructure by incorporating IZO. We have chosen IGZO for its high mobility and excellent on–off switching behavior in the front channel of our oxide–oxide heterostructure. Similarly, for an additional oxide layer, we have selected IZO due to its outstanding electrical properties. The optimized optoelectronic characteristics of the IGZO/IZO phototransistors were identified by adjusting the ratio of In:Zn in the IZO layer. As a result, the most remarkable traits were observed at the ratio of In:Zn = 8:2. Compared to the IGZO single-layer phototransistor, the IGZO/IZO(8:2) phototransistor showed improved photoresponse characteristics, with photosensitivity and photoresponsivity values of 1.00 × 107 and 89.1 AW−1, respectively, under visible light wavelength illumination. Moreover, the electrical characteristics of the IGZO/IZO(8:2) transistor, such as field effect mobility (μsat) and current on/off ratio (Ion/Ioff), were highly enhanced compared to the IGZO transistor. The μsat and Ion/Ioff were increased by about 2.1 times and 2.3 times, respectively, compared to the IGZO transistor. This work provides an approach for fabricating visible-light phototransistors with elevated optoelectronic properties and low power consumption based on an oxide–oxide heterostructure. The phototransistor with improved performance can be applied to applications such as color-selective visible-light image sensors and biometric sensors interacting with human–machine interfaces.
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