Field-effect transistors based on nickel oxide doped with nitrogen semiconductor ferroelectrics for ultralow voltage switch (1 μV), low subthreshold swing and memory

Abstract A single field-effect transistor (FET) based on nitrogen doped-nickel oxide (NiON) semiconductor ferroelectric shows an ultralow voltage switch at a gate voltage value of just 1 μ V and a subthreshold swing (SS) of 55 mV/decade. The same FET acts as a ferroelectric capacitive non-volatile memory between the drain and the ground. All these features are retrieved in a FET based on NiON grown on a thin layer of aluminum oxide (Al 2 O 3 ), which was deposited on a doped silicon (Si) wafer. After 1 year, we retrieved the same values in our devices without any thermal annealing or other procedures to wake up the ferroelectricity.