A CuO nanowire infrared photodetector

The authors report the growth of CuO nanowires on an oxidized Cu wire and the fabrication of CuO infrared photodetector. By annealing the Cu wire at 500 °C in air for 2 h, high density CuO nanowires with an average length of 1.2 μm and an average diameter of 50 nm were successfully grown vertically on the CuO wire. Using an 808 nm laser diode as the excitation source, it was found that rise-time and fall-time of the fabricated CuO infrared photodetector were 15 and 17 s, respectively, when measured in vacuum.