P‐14.29: Analysis of IR Drop in High‐Resolution Silicon‐based OLED Devices

Silicon‐based OLEDs are core components in mobile terminals such as augmented reality (AR) and virtual reality (VR) devices. IR drop leads to a decline in the display quality of silicon‐based OLEDs. To compensate the voltage drop at each pixel, it is necessary to accurately calculate the actual driving voltage of each pixel. Due to the computational power and time constraints of algorithm without sparse storage, it is unable to effectively address the voltage drop calculation problem for high‐resolution silicon‐based OLED devices. To overcome this limitation, this paper proposes a voltage drop algorithm for high‐resolution silicon‐based OLEDs based on sparse storage. First, an equivalent purely resistive circuit model of the silicon‐based OLED driving circuit is established. Then, based on Kirchhoff's laws, a voltage drop model is formulated using vector and matrix equations. The voltage drop at each pixel is accurately solved using sparse matrix techniques. The simulated results demonstrate that the proposed algorithm effectively addresses the voltage drop problem in 2560×2560 resolution OLED device. For a system with 32 million nodes, the algorithm achieves an exact solution in 220.963 seconds. The proposed method offers high efficiency and accuracy, making it highly practical for highresolution OLED voltage drop analysis.