钝化
材料科学
悬空债券
太阳能电池
等离子体
氮化硅
氧化物
椭圆偏振法
化学工程
光电子学
远程等离子体
硅
图层(电子)
纳米技术
薄膜
冶金
化学气相沉积
工程类
物理
量子力学
作者
Wenhao Chen,Shengxing Zhou,Weiqing Liu,Yingming Wang,Penghui Chen,Yuanyuan Yu,Yimao Wan
标识
DOI:10.1016/j.mssp.2023.107874
摘要
This study focuses on enhancing the performance of n-type Tunnel Oxide Passivated Contact (TOPCon) solar cells by exploring the optimization of both front and rear film layers. For the front film, we implement a one-step plasma oxidation process before depositing silicon nitride on alumina, aiming to enhance the quality of the alumina layer and improve overall passivation. In the case of the rear film, we introduce a NH3 plasma treatment to elevate hydrogen content of SiNx. These additional hydrogens diffuse into the interfacial silicon oxide during the firing process to help reduce the number of surface dangling bonds and inhibit the degradation of the passivating contacts, which significantly contributes to enhanced passivation quality. Through separate optimization of these film layers, we aim to harness the full potential of TOPCon solar cells, achieving remarkable improvements in passivation quality and overall performance. With the help of XRD, SIMS, QSSPC, ellipsometry and other characterization tools, the underlying reasons for the improved passivation quality due to plasma oxidation and plasma hydrogenation were explored. Finally, plasma oxidation and hydrogenation lead to ∼0.06 and ∼0.07% average efficiency enhancements, respectively.
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