非易失性存储器
铁电性
材料科学
神经形态工程学
电容器
晶体管
光电子学
铁电电容器
铁电RAM
纳米技术
计算机科学
电子工程
电压
电气工程
电介质
人工神经网络
机器学习
工程类
作者
Thomas Mikolajick,Min Hyuk Park,Laura Bégon‐Lours,Stefan Slesazeck
标识
DOI:10.1002/adma.202206042
摘要
Due to the voltage driven switching at low voltages combined with nonvolatility of the achieved polarization state, ferroelectric materials have a unique potential for low power nonvolatile electronic devices. The competitivity of such devices is hindered by compatibility issues of well-known ferroelectrics with established semiconductor technology. The discovery of ferroelectricity in hafnium oxide changed this situation. The natural application of nonvolatile devices is as a memory cell. Nonvolatile memory devices also built the basis for other applications like in-memory or neuromorphic computing. Three different basic ferroelectric devices can be constructed: ferroelectric capacitors, ferroelectric field effect transistors and ferroelectric tunneling junctions. In this article first the material science of the ferroelectricity in hafnium oxide will be summarized with a special focus on tailoring the switching characteristics towards different applications.The current status of nonvolatile ferroelectric memories then lays the ground for looking into applications like in-memory computing. Finally, a special focus will be given to showcase how the basic building blocks of spiking neural networks, the neuron and the synapse, can be realized and how they can be combined to realize neuromorphic computing systems. A summary, comparison with other technologies like resistive switching devices and an outlook completes the paper.
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