材料科学
有源矩阵
薄膜晶体管
复合材料
弯曲半径
活动层
极限抗拉强度
有机发光二极管
晶体管
光电子学
弯曲
灵活的显示器
发光二极管
基质(水族馆)
图层(电子)
电气工程
电压
工程类
地质学
海洋学
作者
Sadia Sayed Urmi,Mohammad Masum Billah,Sunaina Priyadarshi,Jinbaek Bae,Byunglib Jung,Suhui Lee,Keunwoo Kim,Jiyeong Shin,Sangun Choi,Jun Hyung Lim,Taewook Kang,Changhee Lee,Jin Jang
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2023-01-01
卷期号:44 (1): 80-83
标识
DOI:10.1109/led.2022.3225863
摘要
We report a novel active split structure of low-temperature polysilicon (LTPS) thin film transistor (TFT) on polyimide (PI) substrate showing robust electrical performance under mechanical strain. The compressive and tensile bending tests were carried out with cylinders of radii 3, 2 and 1 mm respectively. The active split TFT exhibits much more stable electrical performance than the conventional TFT. The conventional LTPS TFT shows electrical failure due to the crack generation during tensile or compressive bending test carried out with 1 mm radius cylinder. The split poly-Si islands could resist crack formation/propagation, resulting in a robust electrical performance.
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