电致发光
卤化物
光电子学
铜
二极管
光致发光
铯
发光二极管
量子效率
材料科学
钙钛矿(结构)
化学
图层(电子)
无机化学
纳米技术
冶金
结晶学
作者
Nian Zhao,Jing Yan,Chunxue Zhuo,Lingzhi Yuan,Yu Chen,Nan Yang,Mingmin Zhou,Xiao Yang,Dongmin Qian,Nana Wang,Jianpu Wang
标识
DOI:10.1021/acs.jpclett.3c01821
摘要
Cesium copper halides have the advantages of high photoluminescence quantum efficiency and good stability, making them attractive for replacing toxic lead halides in the field of perovskite light-emitting diodes (LEDs). However, due to their shallow conduction band and the lack of electron transport layers compatible with it, it remains a great challenge to achieve charge balance in LED devices. This drawback manifests as the accumulation of holes at the interface between the emitting layer and electron transport layer, resulting in nonradiative recombination. Here, we demonstrate an effective approach to address this issue by suppressing hole injection, which is realized through modification of the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) layer with polyethylenimine. This leads to cesium–copper–halide LEDs with a high external quantum efficiency of 5.6%, representing an advance in device architecture for efficient electroluminescence from cesium copper halides.
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