点火系统
二极管
材料科学
静电放电
爆炸物
电阻器
电压
瞬态电压抑制器
光电子学
电气工程
变阻器
工程类
化学
航空航天工程
有机化学
作者
Sakhone Pharkphoumy,V. Janardhanam,Moon-Ho Lee,Dae-Gi Kim,Sang-Sik Choi,Deok-Ho Cho,Chel‐Jong Choi,Kyu‐Hwan Shim
出处
期刊:Journal of Semiconductor Technology and Science
[The Institute of Electronics Engineers of Korea]
日期:2018-12-31
卷期号:18 (6): 677-684
被引量:3
标识
DOI:10.5573/jsts.2018.18.6.677
摘要
A new semiconductor bridge ignition chip (SBIC) device is designed, fabricated, and ESD tested. The SBIC device consists of transient voltage suppression (TVS) diode, resistor, and explosive material. The SBIC devices have been fabricated in two different groups with varying active areas: The Group A (small TVS diode active area: 215x255 μm²) and the Group B (large TVS diode active area: 215x375 μm²). Their performance is evaluated in terms of low energy ignition and safety against electrostatic discharge (ESD). The ESD properties are measured and analyzed with machine model (MM) and IEC61000-4-5 standard (surge). The Group A SBIC device was capable of withstanding 1.0 kV MM shocks while the Group B SBIC device can withstand 2.0 kV MM shocks. The surge current protection is higher for the Group B SBIC device than Group A SBIC device. The ignition of SBIC is analyzed by applying the MM currents/voltages. The firing occurred in the Group A and Group B SBIC devices when the applied MM voltage exceeds 1.4 kV and 2.4 kV, respectively. This is associated with the fact that the critical ignition voltage was related to the bridge size in the igniters and the size of TVS diodes as well. The SBIC device presented excellent operation like strong explosive fire, reduced energy for ignition, and ruggedness against ESD exposures.
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