声子
半导体
电子迁移率
凝聚态物理
材料科学
散射
带隙
变形(气象学)
声子散射
光电子学
物理
光学
复合材料
作者
Wenxu Zhang,Zhishuo Huang,Wanli Zhang,Yanrong Li
出处
期刊:Nano Research
[Springer Science+Business Media]
日期:2014-09-03
卷期号:7 (12): 1731-1737
被引量:385
标识
DOI:10.1007/s12274-014-0532-x
摘要
We have calculated the longitudinal acoustic phonon limited electron mobility of 14 two-dimensional semiconductors with composition of MX
2, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by the deformation potential approximation. We found that out of 14 compounds, MoTe2, HfSe2 and ZrSe2 are promising regarding to their possible high mobility and finite band gap. The phonon limited mobility can be above 2,500 cm2·V−1·s−1 at room temperature.
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