High-sensitivity and broadband PEDOT:PSS–silicon heterojunction photodetector

Recently we have shown that the poly(3,4-ethylenedioxythiophene): polystyrene sulfonate PEDOT:PSS/silicon hybrid heterojunctions possess great potential for light detection applications. Here we report fabrication of a broadband and high sensitive detector in both photo-current and photo-voltage mode. We propose PEDOT:PSS/silicon junction as a promising candidate for fabrication of high-sensitivity photodetector with responsivity as high as 90–230 mA/W in a broad range of incident light from UV to IR spectrum (from 350 to 950 nm), and responsivity up to 106 V/W in the self-powered photovoltage mode. The effect of organic layer conductivity on the responsivity of the detector is also studied here.