齐纳二极管
光电子学
发光二极管
静电放电
二极管
材料科学
Clipper(电子)
亮度
瞬态电压抑制器
电压
电气工程
光学
晶体管
物理
工程类
作者
Sang-Sig Choi,D H Cho,Chel‐Jong Choi,J Y Kim,J. Yang,Kyu‐Hwan Shim
标识
DOI:10.1088/0268-1242/26/5/055009
摘要
The electrostatic discharge (ESD) stability of GaN-based LEDs, which are assembled with new transient voltage suppression (TVS) Zener diodes, has been characterized in experiments on reverse leakage current and functionality. Advantageous features of TVS Zener diodes with extremely low differential resistance and low leakage current have enhanced their ESD protection capability, especially at high temperature. The TVS Zener presented an excellent performance in protecting GaN-based LEDs from ESD stress exceeding the human body model ±8 kV at 110 °C. The ESD robustness of the high-temperature stability is analyzed in order to provide proper reliability under hostile environment of massive heat and light delivered from LEDs.
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