Monolithic cyan − violet InGaN/GaN LED array

In the case of InGaN alloys grown by metalorganic vapour phase epitaxy on a c-plane GaN, indium content decreases as the substrate miscut is increased. This phenomenon has been previously used to fabricate laser diodes with variable wavelength on one chip [Appl. Phys. Express 5, 021001 (2012)]. In that work, however, wavelength variation was only 5 nm. In the present work we show independent, electrically driven array of light emitting diodes (LED), covering 40 nm emission wavelength range on one chip. This is achieved by a particular patterning technique, which enables the change in the local miscut of the substrate by introducing large enough slopes for practical devices. This technological approach offers a new degree of freedom for InGaN/GaN bandgap modification and device engineering. It can be applied to freestanding GaN as well as to GaN/sapphire templates used for mass production of LEDs. Once optimized, this approach could eventually lead to truly monolithic RGB LEDs.