神经形态工程学
材料科学
非易失性存储器
光电子学
计算机科学
异质结
铁电性
记忆电阻器
纳米技术
电子工程
人工神经网络
人工智能
工程类
电介质
作者
Yunpeng Xia,Ning Lin,Jiajia Zha,Haoxin Huang,Yiwen Zhang,Handa Liu,Tong Jinyi,Songcen Xu,Peng Yang,Huide Wang,Long Zheng,Zhuomin Zhang,Zhengbao Yang,Ye Chen,Hau Ping Chan,Zhongrui Wang,Chaoliang Tan
标识
DOI:10.1002/adma.202403785
摘要
In this era of artificial intelligence and Internet of Things, emerging new computing paradigms such as in-sensor and in-memory computing call for both structurally simple and multifunctional memory devices. Although emerging two-dimensional (2D) memory devices provide promising solutions, the most reported devices either suffer from single functionalities or structural complexity. Here, this work reports a reconfigurable memory device (RMD) based on MoS
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