薄膜晶体管
液晶显示器
材料科学
门驱动器
光电子学
逻辑门
降级(电信)
计算机科学
电子工程
电气工程
工程类
纳米技术
电压
图层(电子)
作者
Liufei Zhou,Shao Xian-jie,Honggang Gu,Xu Chen,Haihong Wang,Zhuqing Xu
摘要
Recently, a‐IGZO TFTs have attracted considerable attention for ultra large‐sized and ultra high‐resolution display due to high mobility and good uniformity. The life‐time of integrated gate driver is mainly determined by the stability of low‐level maintaining and pull‐up TFTs, which always experience severe performance degradation after a long time operation. In this paper, a robust a‐IGZO integrated gate driver with dual lowlevel maintaining units is proposed and fabricated for ultra large‐sized and high resolution TFT‐LCD applications. The simulation and BTS measurement results demonstrate that proposed a‐IGZO gate driver has a large VTH shift margin, which contributes to extended life‐time of circuit operation.
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