BEOL Interconnects for 2nm Technology Node and Beyond

We present novel back-end-of-line (BEOL) copper interconnect integration for advanced technology nodes using low-k dielectric dep, binary liner metal gapfill process, radical assisted annealing, chemical mechanical planarization (CMP) and selective metal cap. Unit process and metrology data, electrical tests, Time Dependent Dielectric Breakdown (TDDB) reliability, Electromigration (EM) reliability and circuit simulations confirm significant power-performance-area (PPA) gains for 2nm technology node and beyond.