Unique growth of self-oriented LaNiO<sub>3</sub> thin films prepared by a chemical solution deposition method

We investigated the relationship between the self-orientation and process conditions of self-oriented LaNiO 3 (LNO) thin films fabricated by a chemical solution deposition method.The LNO thin films were deposited on Pt-coated Si, SiO 2 /Si, glass, c-plane sapphire, and stainless-steel substrates, which have crystal structures different from that of LNO.Increasing the heating rate during the transition from 200 °C (pre-heating) to 380 °C (pyrolysis) enhanced the self-orientation of the resulting LNO thin films.The LNO thin films deposited on the various substrate materials exhibited (h00) self-oriented growth because Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films deposited on the selforiented LNO thin films clearly adopted the (h00) preferential orientation.As a unique behavior of PZT/LNO bilayer structures, the PZT upper layer has stronger (h00) oriented growth than that of the underlying self-oriented LNO layer.