光探测
材料科学
响应度
碲化铋
碲
光电子学
钝化
带隙
化学气相沉积
基质(水族馆)
纳米技术
光电探测器
图层(电子)
热电材料
复合材料
冶金
地质学
海洋学
热导率
作者
Tiange Zhao,Fang Zhong,Shi‐Cheng Wang,Yingke Wang,Tengfei Xu,Yue Chen,Yiye Yu,Jiaxiang Guo,Zhen Wang,Jiancan Yu,Pingqi Gao
标识
DOI:10.1002/adom.202202208
摘要
Abstract Broadband photodetection including optical communication wavelength band is of great significance because of the great potential for various civilian and military applications. Topological insulators with unique surface electronic states have attracted more and more attention in broadband photodetection. Among them, due to its suitable band gap (0.16–1.36 eV), ultra‐high mobility, and excellent air stability, 2D bismuth telluride (Bi 2 Te 3 ) is regarded as a promising candidate. However, the growth of large‐size Bi 2 Te 3 is challenging because of the poor chemical reactivity of tellurium (Te) element. Here, large‐scale (240 µm, ten times larger than the current record) Bi 2 Te 3 flakes with controllable thickness (one to few layers) are successfully synthesized by H 2 ‐assisted chemical vapor deposition. Thanks to the strong reducibility and the passivation on the substrate of H 2 , the growth rate is as high as 48 µm min −1 , which is ten times faster than that reported. Moreover, the Bi 2 Te 3 ‐photodetector exhibits broadband detection (520–2000 nm), high responsivity of 252 A W −1 , excellent detectivity of 5.1 × 10 11 cm Hz 1/2 W −1 , and fast response time (τ rise /τ decay ≈ 41/38 ms), implying potential applications in broadband optoelectronics. More importantly, this work may pave a way for the rapid growth of other novel large‐scale 2D materials.
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