静态随机存取存储器
降级(电信)
压力(语言学)
根本原因
电压
边距(机器学习)
国家(计算机科学)
可靠性工程
计算机科学
产品(数学)
材料科学
电气工程
工程类
电信
算法
数学
语言学
哲学
几何学
机器学习
作者
Oberon Dixon-Luinenburg,J. Fine
出处
期刊:Proceedings
日期:2018-11-01
卷期号:81009: 387-396
被引量:1
标识
DOI:10.31399/asm.cp.istfa2018p0387
摘要
Abstract In this paper, we demonstrate a novel nanoprobing approach to establish cause-and-effect relationships between voltage stress and end-of-life performance loss and failure in SRAM cells. A Hyperion II Atomic Force nanoProber was used to examine degradation for five 6T cells on an Intel 14 nm processor. Ten minutes of asymmetrically applied stress at VDD=2 V was used to simulate a ‘0’ bit state held for a long period, subjecting each pullup and pulldown to either VDS or VGS stress. Resultant degradation caused read and hold margins to be reduced by 20% and 5% respectively for the ‘1’ state and 5% and 2% respectively for the ‘0’ state. ION was also reduced, for pulldown and pullup respectively, by 4.5% and 5.4% following VGS stress and 2.6% and 33.8% following VDS stress. Negative read margin failures, soft errors, and read time failures all become more prevalent with these aging symptoms whereas write stability is improved. This new approach enables highly specific root cause analysis and failure prediction for end-of-life in functional on-product SRAM.
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