材料科学
薄膜
薄板电阻
兴奋剂
透射率
光电子学
电子迁移率
制作
透明度(行为)
能量转换效率
溶解过程
纳米技术
图层(电子)
计算机科学
病理
替代医学
医学
计算机安全
作者
Yanqiu Li,Sha Zhu,Renhuai Wei,Ling Hu,Xianwu Tang,Jie Yang,Wenhai Song,Jianming Dai,Xuebin Zhu,Yan Sun
标识
DOI:10.1016/j.ceramint.2019.09.201
摘要
Transparent conducting (TC) donor-doped In2O3 thin films are the critical components in photovoltaic, display and solid-state lighting fields. In2O3-based TC films with high carrier mobility are required for reducing the power consumption of devices. Meanwhile, a high near-infrared (NIR) transparency can significantly improve the power conversion efficiency in solar cells. Here, W-doped In2O3 thin films with high carrier mobility and NIR transparency were obtained through a facile solution process, which is suitable for large-scale thin film fabrication. The effects of W concentration (0.3 at% to 0.7 at%) on the microstructures, electrical and optical properties of In2O3 thin films are investigated in detail. It is found that the 0.5% W-doped In2O3 thin film exhibits high carrier mobility of 23 cm2 V−1 s−1 at a carrier concentration of 5.02 × 1020 cm−3, showing a high NIR transmittance over 82% and low sheet resistance of 32 Ω/sq. The solution processed W-doped In2O3 thin films with low sheet resistance and high NIR transparency can be potentially used as transparent electrodes for solar cells.
科研通智能强力驱动
Strongly Powered by AbleSci AI