材料科学
垂直腔面发射激光器
位错
光电子学
激光器
透射电子显微镜
图层(电子)
半导体激光器理论
原位
半导体
氧化物
压力(语言学)
光学
复合材料
纳米技术
冶金
化学
语言学
物理
哲学
有机化学
作者
Robert Fabbro,Raffaele Coppeta,Michael Pusterhofer,Gernot Fasching,Thomas Haber,Werner Grogger
出处
期刊:Micron
[Elsevier]
日期:2022-07-01
卷期号:158: 103264-103264
被引量:2
标识
DOI:10.1016/j.micron.2022.103264
摘要
Understanding how defects are generated and propagate during operation in modern vertical cavity surface emitting lasers (VCSEL) is an important challenge in order to develop the next generation of highly reliable semiconductor lasers. Undesired oxidation processes or performance degrading dislocation networks are typically investigated by conventional failure analysis after damage formation. In this works new approach to VCSEL failure analysis, oxide confined high power VCSELs are investigated in-situ at elevated temperatures in a transmission electron microscope. At high temperatures, lateral oxidation of the current confinement layer as well as formation and propagation of dislocations are observed. The experimental results may deepen the understanding of defect generation in VCSELs during stress tests or standard operating conditions. On the other hand, in-situ TEM proofed to be a promising technique to be utilised in future VCSEL failure analysis, possibly leading to the development of improved defect models and increased VCSEL reliability.
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