高功率脉冲磁控溅射
物理气相沉积
材料科学
涂层
氮化铬
锡
溅射
溅射沉积
阴极
沉积(地质)
阳极
冶金
氮化物
复合材料
薄膜
纳米技术
电气工程
图层(电子)
化学
工程类
电极
古生物学
物理化学
沉积物
生物
作者
Wolf‐Dieter Münz,Roman Klink,D Aleksić,Mansour Mazaheri
出处
期刊:Coatings
[Multidisciplinary Digital Publishing Institute]
日期:2022-02-23
卷期号:12 (3): 300-300
被引量:5
标识
DOI:10.3390/coatings12030300
摘要
This paper describes a physical vapor deposition (PVD) coating equipment, as well as the according deposition parameters suitable to provide hard nitride coatings on broaches up to a length of 2.2 m. The octagonal-shaped vacuum chamber reached a height of 4.5 m and a diameter of 1.2 m. To explore a sufficient and reproducible film, an adhesion test sample and tools were subjected to a pretreatment in a Cr2+ Ar+ high-power impulse magnetron sputtering (HIPIMS) plasma prior to the actual film deposition. Two deposition methods were applied: reactive unbalanced magnetron (UBM) sputtering was introduced to deposit TiAlN-based coatings from Ti50Al50 2.5 m long targets. Alternatively, multilayer coatings were generated by reactive simultaneous UBM sputtering from Ti50Al50 and TiAl6V4 targets, respectively, and chromium targets utilizing high-power impulse magnetron sputtering (HIPIMS) technology. In the latter case, three cathodes were furnished with 0.9 m long targets lined up upon each other. A segmented UBM cathode design was described to meet economic deposition if varying tool sample lots in the deferring workpiece lengths have to be handled in industrial practice. The resulting (TiAl/Cr)N multilayer coatings attained typical hardness values of HV 2800 and an adhesion measured by critical load up to 50 N. The cutting performance of this coating was evaluated by simulated shaping tests over a test length of 210 m on C 45 steel. The (TiAlV/Cr)N showed an improved wear behavior by factor of 2 to 3 compared to TiN deposited by cathodic arc operated in an industrial PVD coater. A real comparison was undertaken, applied to a 1.3 m long model broach. (TiAl/Cr)N showed a prolongation in industrial lifetime by 150% compared to TiN.
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