Artificial electronic synapse characteristics of a Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor device on flexible stainless steel substrate

In this work, we fabricate and report a flexible memristor device with the structure of Ta/Ta2O5-x/Al2O3/InGaZnO4 on a stainless steel substrate, which is robust in emulating the bio-synapse function and anti-pull capacity. The I-V curves show that this device has excellent stability and uniformity in 100 sweep cycles. When applying stimulation voltage pulses, the device conductance is adjusted gradually and can still be modulated after 1000 times of bending. Furthermore, this device demonstrates essential synaptic behaviors, including short-term plasticity, long-term plasticity, and short-term to long-term transition. In addition, under a tension of 200 N, the I-V characteristics have no obvious degeneration and the conduction of the device can still be modulated under pulse trains. The flexible Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor can be a promising candidate for neuromorphic computing applications.