Degradation of Threshold Voltage in Dynamic Threshold nMOSFETs with Temperature

The temperature dependence of the threshold voltage of dynamic threshold nMOSFETs is modeled and analyzed. The threshold voltage in common nMOSFETs shows greater dependence on temperature,channel doping concentration and gate oxide thickness than that in dynamic threshold nMOSFETs. The mechanism of smaller threshold voltage degradation with temperature in dynamic threshold nMOSFETs is discussed. The dynamic threshold voltage MOSFETs with excellent performance will find a place in the applications of high temperature field.