材料科学
化学机械平面化
腐蚀
钴
电偶腐蚀
薄脆饼
铜
数码产品
冶金
金属
电迁移
纳米技术
图层(电子)
复合材料
电气工程
工程类
作者
Baimei Tan,Lei Guo,Da Yin,Tengda Ma,Shihao Zhang,Chenwei Wang
出处
期刊:Elsevier eBooks
[Elsevier]
日期:2022-01-01
卷期号:: 359-381
被引量:1
标识
DOI:10.1016/b978-0-323-85405-4.00007-0
摘要
As a main representative of the electronic industry, the integrated circuit (IC) has become the landmark product in the advanced manufacturing field around the world. At present, copper is the most widely used metal wiring material for IC. Cobalt has weak electrochemical activity and electromigration, and has fewer grain boundaries and a smaller crystallization rate in the deposition process, which give hope to cobalt replacing copper as a new wiring material in the new technology nodes below 10 nm. In order to ensure the stability and reliability of IC, the wafer surface needs to be globally flattened by chemical mechanical planarization (CMP), which relates to the wiring metal and the barrier layer metal added to prevent the wiring metal from diffusing into the dielectric. Inhibitors are usually introduced into the CMP slurry to improve the surface flatness of the wafer, reduce the corrosion defects on the surface of the wiring metal, and inhibit the reaction of the wiring metal in the concave and the interface (galvanic) corrosion between the wiring metal and the barrier metal. The selection and mechanism of inhibitors, as well as the synergistic effect between inhibitors and other reactants have been widely studied. In this chapter, the inhibitors used in the CMP process of copper, cobalt, and their barrier metals are reviewed.
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